Carrier concentration in hall effect formula

Determination Hall Effect October 30 2012. The Hall Effect studies on Zn-Te thin films of different composition and thicknesses have been made at room temperature for different magnetic fields between 3 to 95 K Gauss at different.

Therefore for the simple explanation of a moderate magnetic field the following is the Hall coefficient.

. The majority carrier electron concentration is n o ½N d - N a N d - N a 2 4n i 212 1016 cm-3 The minority carrier hole concentration is p 0 n i 2 n 0 15 x 101021016. These measurements will enable the student to determine. Hall Effect is used to calculate the.

The carrier concentration at 77 K reaches a minimum at 3110 3 PTe 1410 3 torr for Tg 600 C. Hot Probe Test to determine Carrier Type Seebeck effect. The DC Hall effect is an important phenomenon in condensed matter physics which allows us to measure properties of a semiconductor.

And the mobility of carriers in semiconductors. Fig1 Schematic representation of Hall Effect in a conductor. The Hall voltage is much more measurable in semiconductor.

Measure the resistivity of a doped silicon wafer. Step by step guidelines to perform this experiment is given in this video. This Lab has several objectives.

The directions of I B and V are important this. At temperature TK in an intrinsic semiconductor n p ni where ni is called. Hall Effect is used to find whether a semiconductor is N-type or P-type.

In our experiment we use the van der Pauw method to. The Hall mobility µ 1qn s R S in units of cm 2 V-1 s-1 is calculated from the sheet carrier density n s or p s and the sheet resistance R SSee Eq. The results of Hall effect measurements of PbSnTePbTe are shown in Fig.

Measurement of carrier concentration in metals and semiconductors For a Hall effect measurement the arrangement is. Hence the Hall voltage at B 1T and i10A and t 1 mm for copper and Silicone are 06µV and 6 mV respectively. CCG Constant Current Generator J X current density ē electron B applied magnetic field t thickness w width V H Hall.

R H p μ H 2 n μ e 2 e p μ H n μ e R H p n b 2 e p n b 2. This video contains the full hall coefficient and carrier concentration experiment. Hall Effect is used to find carrier concentration.

Hall effect is useful to identify the nature of charge carriers in a material and hence to decide whether the material is n-type semiconductor or p-type semiconductor also to. The most important adjustable properties is the carrier concentration np for electronsholes. Applications of Hall Effect.

The electron and hole concentration remain constant as long as the temperature remain constant. The Hall Effect voltage V H and Hall coefficient R H for the same sample will be measured using a magnetic field. The need to determine accurately support the importance of the Hall effect.

All you need is a. The type n or p. Naivly assume one type of carrier and plug into the formula R H 1ne this yields a carrier concentra-tion of 4296 8109 1588 10 cm 3 wchich is about 1000 times greater than the.

Carrier Concentration Of Metal Using Hall Effect Experiment Youtube